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DBI™
ZiBond
3d Integration
FAQ

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spacer ZiBond Direct Wafer Bonding Technology spacer
Ziptronix is the only company with the technology enabling room temperature, non-adhesive wafer-to-wafer and die-to-wafer bonding for a wide variety of semiconductor materials. The proprietary ZiBond process enables the bonding of multiple materials in previously impossible combinations by using a very thin layer of silicon oxide to facilitate direct bonding. Since the process is completed at room temperature, there are no residual stresses, (which can occur with thermal or anodic bonding methods.) The mechanical wafer preparation is based on a standard chemical-mechanical polish, which then enables many material combinations to be bonded directly. The spectrum of possibilities includes combinations from silicon-to-silicon, germanium, indium phosphide, gallium arsenide, gallium nitride, quartz, and others. The resulting bond strength typically exceeds the fracture strength of the bonded bulk materials. Ziptronix technology can immediately produce custom wafers and substrates tailored to specific thermal characteristics or other process requirements.  To learn more about how our ZiBond technology can benefit your process, contact Ziptronix.

Bonding Method
Hermetic Room-
temperature
Wafer-to-wafer Die-to-wafer Multi-die integration Standard processing thru bond interface Stress-free
Ziptronix
ZiBond
Adhesive
Thermal Fusion
Anodic
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